2N from Fairchild Semiconductor. Find the PDF Datasheet, Specifications and Distributor Information. 2N Datasheet PDF Download – NPN Transistoor, 2N data sheet. 2N datasheet, 2N pdf, 2N data sheet, datasheet, data sheet, pdf, Central Semiconductor, Leaded Small Signal Transistor General Purpose.

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High gain at low levels plus very thin regions in these units combine to offer low power consumption and high radiation resistance to make the 2N and 2N ideal for space applications. It fits all TO-5 and TO-9 cases, regardless of case diameter.

At 25 C, either collector-to-base voltage 29n14 25 v. Dwtasheet Point Contact Diodes The first industry standard subminiature glass general purpose and computer diode. These new subminiature devices offer you minimum cutoff frequency of 90 gc to gc at -2 volts with low junction capacitance – Cj 0 bias from 0. Where deviations from this occur they are noted.

Bipolar NPN RF transistor, TO-18

AJ, si pnp, AJ. He is not necessarily the original registrant. He will be glad to assist you. Within each category, types are arranged in order of increasing value of a key design parameter. Baird-Atomic offers the most complete line of Engineers and Scientists: Key to the letter codes is: Over-all sock- et height is 0.

Leland Airborne Products Div.


Product Categories | GP BJT | New Jersey Semiconductor

General Electric transistors exceed Minwteman M EIA-registered types come first, followed by 1 house-numbered types.

Makes possible com- bined high voltage and true silicon oxide passivation. Vc up to 30 v, Ie up to ma.

And, because they complement each other, extensive circuit simplification is now practical within power applications. Typi- cal saturation resistance of series 2N and 2N is 0. These advanced units offer you ultra-high performance from dc to me, typical mid-frequency noise figures of less than 2 db, and increased high-frequency stability through guaranteed maximum output capacitance of 2.

Units can switch 25 amps at collector-emitter voltages of 40, 60 and 80 v. Frank Malley, Dick son Electronics, P. McDowell Road Phoenix 8, Ariz. These designs make use of the R-C compensation to assure long life and high reliability. T40 Electronic Design New from Honeywell! These specifications out- line electrical and environmental capabilities under standard Mil-spec conditions. Type ab me MAX. Update Your Transistor File Step 1. Please address your card or letter to Department and specify which of these four information files you desire.

PIV ratings’are from 50 to 1, volts for the 6 and 12 amp packages.

Ask your authorized Tl distributor about ” Transistor Circuit Design an informative new hardbound book for circuit designers authored by 32 Tl engineers and published by McGraw-Hill.

These methods have yielded high voltage rat- ings but other characteristics of the resulting transistors do not compare favorably with those of surface passi- vated devices. Each type in the cross index carries a code that identifies its application category and specifies the block of 10 types in datashet it appears.


2N Datasheet, Equivalent, Cross Reference Search. Transistor Catalog

Retain highly uniform characteristics from batch to batch, making possible much closer tolerances in the design of small-signal, high-temperature and amplifier circuits. Because the diodes and transistors are manufactured and connected in batches, the cost of these units is competitive with that of conventional compo- nents and less than 22n914 of other micro-circuit devices. Minute gain is 10 at 25 amps col- lector current. They can be used effec- tively in short-wave converters, medium wave converters and all high frequency applications.

The Reader-Service numbers for the prod- ucts can be circled on either the Reader -Service card in the main section or the special one in the back of this Data Chart. IRC PW Resistors are available with special resis- tance windings, designed to act as a standard resistor at normal operating wattages and fuse at some specific overload condition.

Maximum forward voltage datasheett of less than 1. They employ an extruded parallel fin design and may be used in either a vertical or horizontal position.

AJ, ge pnp,AJ,ge npn.